| 发明名称 |
Method for forming thin film transistors with anodic oxide on sides of gate line |
| 摘要 |
An electro-optic device featuring an semiconductor device formed by providing an insulator over a gate electrode, and anodic oxidizing only the sides of the gate electrode.
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| 申请公布号 |
US5568288(A) |
申请公布日期 |
1996.10.22 |
| 申请号 |
US19930153080 |
申请日期 |
1993.11.16 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;MASE, AKIRA;HIROKI, MASAAKI |
| 分类号 |
G02F1/136;G02F1/13;G02F1/1362;G02F1/1368;G09G3/20;G09G3/36;H01L21/336;H01L29/786;(IPC1-7):G02F1/134;C25D5/02;H05K3/00 |
主分类号 |
G02F1/136 |
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