| 摘要 |
<p>PURPOSE: To obtain method and system for producing a semiconductor device in which the electrostatic damage can be reduced while preventing adhesion of dust and increasing the production yield. CONSTITUTION: When elements are formed on a glass based substrate and cleaned as specified, pure water cleaning S101, S102 is carried out using a cleaning liquid produced by admixing a small quantity of carbon dioxide gas and alcohol to pure water. When a glass based substrate is diced, a cutting liquid produced by admixing carbon dioxide gas to pure to pure water is fed constantly or a cutting liquid produced by admixing a small quantity of carbon dioxide gas and alcohol to pure water is fed in the method and system for producing a semiconductor device. Formation of active element, filter layer and orientation film is carried out under the state of substrate along with lapping and acceptable chips are superposed after dicing.</p> |
