| 摘要 |
PURPOSE: To relax the limitation of the lithography technology and to improve detection sensitivity and treatment capacity by forming a channel layer in small-gauge wire shape where electrons or holes flow on the surface of a semiconductor substrate and changing the conductivity. CONSTITUTION: A source/drain electrode 407 and Si2 insulation film 405 are formed on p-type Si substrate 402, and D-type n-channel inversion layer 403 is allowed to form between the insulation film 405 and the substrate 402. Further, a gate electrode 404 for creating a small-gauge wire is formed on the insulation film 405, a surface exposure part 406 of the SiO2 insulation film 405 is formed directly above the channel inversion layer 403 to function as H<+> selectively ion sensitive film, and the width of the small-gauge wire for forming the inversion layer 403 is set to 0.05μm and a channel length is set to 2μm. With this configuration, a pH sensor with a high detection sensitivity can be obtained. By setting the insulation film 405 to be in a double film of SiO2 and Si3 N4 and immobilizing penicillinase to the insulation film 405 and the charge transmission film on the electrode 404, a sensitive penicillin detection can be obtained. |
