| 摘要 |
<p>PURPOSE: To obtain a method of manufacturing a TFT of LDD structure which is excellent in reproducibility and uniformity through its surface. CONSTITUTION: An active region 31 of thin polycrystalline silicon film, a source region and a drain region 32 both of low resistance, and a high-resistance region 33 which links the active region 31 and the source region and the drain region 32 together are formed on an insulating substrate 1 for the manufacture of a thin film transistor, wherein the high-resistance region 33 is formed through an ion implantation method of a non-mass separation type while the substrate 1 is cooled down, so that, the region 33 can be formed under such doping conditions that at acceleration voltage is set high, and ions are implanted high in doses.</p> |
