发明名称 |
PLASMA CHEMICAL DEPOSIT DIAMOND SYNTHESIS |
摘要 |
The diamond is prepared by DC discharge plasma chemical vapor deposition method which comprises (a) generating plasma between anode and cathode of the reaction vessel, (b) decomposing the reactive gas by plasma, (c) manufacturing diamond on the substrate. This CVD method keeps generating stable plasma by blocking heat flow from cathode suspension equipment and maintaining cathode temperature up to more than the forming temperature of the solid phase carbon. The high melting point carbides such as tungsten carbide, tantalum carbide, titanium carbide are used for cathode material.
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申请公布号 |
KR960014905(B1) |
申请公布日期 |
1996.10.21 |
申请号 |
KR19930023549 |
申请日期 |
1993.11.06 |
申请人 |
KIST |
发明人 |
LEE, JAE-KAP;BAEK, YOUNG-JOON;EUN, KWANG-YONG |
分类号 |
C01B31/06;C30B29/04;(IPC1-7):C01B31/06 |
主分类号 |
C01B31/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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