发明名称 FORMING METHOD FOR RESIST PATTERN
摘要 PURPOSE: To form a resist pattern provided with an overhang-shaped cross sectional shape in a small number of processes at a low cost so as to reduce a cost consumed for a formation process of a wiring pattern based on a list-off method. CONSTITUTION: After a lower layer resist coating film 2 consisting of a non- photosensitive negative type photoresist material is formed on a substrate 1, an upper layer resist coating film 3, which is not compatible with the lower layer resist coating film 2 and consists of a photosensitive positive type photoresist material, is formed, and then, selective exposure is carried out to the upper layer resist coating film 3, and consequently, solubility of an exposed part, 3a to a developer is increased. Subsequently, the exposed part, 3a is dissolved by a development process, and at the same time, the lower layer resist coating film 2 is also dissolved while using a remain part 3b as a mask. When the edge of the lower layer resist coating film 2 is retracted from the edge of the remain part, 3b, a resist pattern 6 consisting of a remain part 2b in the lower layer resist coating film 2 and the remain part 3b in the upper layer resist coating film 3 is overhung.
申请公布号 JPH08272107(A) 申请公布日期 1996.10.18
申请号 JP19950071416 申请日期 1995.03.29
申请人 SONY CORP 发明人 TANAKA TORU
分类号 G03F7/008;G03F1/00;G03F1/68;G03F7/022;G03F7/26;G03F7/30;H01L21/027;H01L21/3205;H01L21/768 主分类号 G03F7/008
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