| 摘要 |
PURPOSE: To avoid the erroneous detection of stepped part in an interlayer insulating film for measuring slipped overlapping by a method wherein a thin film formed in a region including a position detecting mark formed on a semiconductor substrate is selectively removed to expose the position detecting mark. CONSTITUTION: A film composition is coated with a photoresist 4. Successively, the photoresist 4 is exposed through the intermediary of a photomask pattern making an aperture part only on a gate electrode 2 to be the first position detecting mark and peripheral part of the semiconductor substrate 1 to be removed by further development. Furthermore, an interlayer insulating film 3 is dryetched away by the mixed gas of CF4 , CH3 and Ar using photoresist 4 in the aperture part as an etching mask. Next, the first position detecting mark formed of the gate electrode and the semiconductor substrate 1 are exposed. Through these procedures, the erroneous detection of the position detecting mark by the interlayer insulating film 3 can be avoided. |
