| 摘要 |
PURPOSE: To limit a light intensity rate in light intensity distribution in a vertical direction by specifying a stripe width of a current path and a difference of effective refraction factor in a horizontal direction and making a light confinement coefficient per well of a quantum well structure and the number of wells in specified relation outside a stripe-like current injection region of an active layer. CONSTITUTION: A stripe width of a current path is made 2 to 5μm, a difference of effective refraction factor in a horizontal direction is made 1×10<-3> to 5×10<-3> , and the relation between a light confinement coefficientγper well of a quantum well structure outside a stripe-like current injection region of an active layer and the number of wells is madeγ×n>0.09. Since a required light distribution region is formed in a part A outside a current injection region of an active layer 3 by MQW and a region which serves as a saturable absorber is formed, rate of light intensity in a vertical direction light intensity distribution can be limited.
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