| 摘要 |
PURPOSE: To prevent introduction of H to an InP semiconductor layer by performing epitaxial growth for a compound semiconductor layer containing As after formation of a compound semiconductor layer containing INP by using organic As using As as a raw material by a metal organic vapor phase growth method. CONSTITUTION: An n-type GaAs buffer layer 1, an n-type AlGaInP first clad layer 3, a nondoped GaInP active layer 4, a p-type AlGaInP second clad layer 5, a p-type GaInP intermediate layer 6 and a p-type GaAs cap layer 7 are formed epitaxially on an n-type GaAs substrate by an MOCVD method. in formation after the formation of the second clad layer 5, organic As (TAM, etc.) is especially used in MOCVD of the cap layer 7 as a raw material of As thereof. Since H does not exist around As in the constitution, H is prevented from being introduced to an InP semiconductor layer of the AlGaInP second clad layer 5 and the GaInP intermediate layer 6. |
