PRODUCTION OF PHASE SHIFT MASK

摘要

PURPOSE: To provide a process production capable of easily producing a phases shift mask with which a phase shift effect higher than heretofore is obtainable and the drastic limitation on the conditions of phase shift exposure is eliminated with high productivity. CONSTITUTION: A transparent substrate 1 is provided with a translucent layer 2 and after this translucent layer 2 is patterned by electron beam lithography, the resist is removed and a positive photosensitive resist 6 is applied and is exposed with a high exposure from the transparent substrate 1 side, then the regions exclusive of the regions at the ends of the translucent patterns 2' are sensitized and the other regions are removed by development to form first resist patterns 6'. A negative type resist 7 is applied and is exposed with a low exposure from the transparent substrate 1 side to sensitize only the apertures of the translucent layer patterns 2'. The other regions are removed by development to form second resist patterns. A light shielding layer 3 is then formed on it and thereafter the excess light shielding layer 3 is lifted off by removing the first and second resist patterns.