| 发明名称 |
METHOD OF FORMING PLATINUM THIN FILM ON SILICON WAFER, SILICON SUBSTRATE MANUFACTURED BY ITS METHOD AND MANUFACTUREOF SEMICONDUCTOR ELEMENT USING ITS SUBSTRATE |
| 摘要 |
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| 申请公布号 |
JPH08274046(A) |
申请公布日期 |
1996.10.18 |
| 申请号 |
JP19950331148 |
申请日期 |
1995.11.27 |
| 申请人 |
TOYO CEMENT KK |
发明人 |
RI TOUSHIYU;ZEN TOUICHI;BOKU TOUEN;KAWA ASAO;IN YOSHITOSHI;KIN FUMIHIRO;U KENTEI |
| 分类号 |
H01L21/285;H01L21/203;H01L21/28;H01L21/288;H01L21/316;H01L21/3205;H01L41/08;H01L41/09;(IPC1-7):H01L21/285 |
主分类号 |
H01L21/285 |
| 代理机构 |
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代理人 |
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| 地址 |
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