| 摘要 |
PURPOSE: To enhance the turn-off durability of an emitter switched thyristor(EST) without increasing the on-voltage. CONSTITUTION: A voltage drop obtained by a hole current flowing in the direction Z to latch up a thyristor from an IGBT mode in the case of a conventional EST, is obtained by the diffusion potential of a diode composed of a second (p) base region 6 and an n-type polycrystalline silicon film 13 formed on it. Consequently, it becomes possible to uniformize the recovery of the pn-junction at the time of turn-off, and to enhance the breakdown durability.
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