| 摘要 |
PURPOSE: To provide a low-reflection end face structure having excellent controllability and reproducibility by controlling the growth speed of clad layers in a waveguide direction by a method of selective growth of MOVPE in a semiconductor optical waveguide having a window structure for embodying the low reflection end face, thereby embodying a structure to obviate the occurrence of a difference in level in the clad layers. CONSTITUTION: A pair of SiO2 stripe masks are formed in the [011] direction on an n-InP substrate 101 at a spacing of 1.57μm. A multilayered structure including an active layer 104 is deposited by selective MOVPE on these regions of 1.5μm. At this time, the stripe mask spacings of the SiO2 are made zero in the regions of the window structure, by which the window structure is produced without executing etching of the semiconductor. The formation of the difference in level of the clad layers in the window region after the selective growth of the next clad layer 106 is prevented by previously forming the window region mask width larger than the width in the other regions. |
