| 摘要 |
PURPOSE: To provide a light receiving device for monitoring lines of optical communication fiber cable network such that high quantum efficiency, low dark current and high current multiplication factor are obtained for light having a wavelength of 1.65μm. CONSTITUTION: A semiconductor light receiving device is composed of a light absorption layer 3 of super lattice structure having n-InGaAsP and InAsP on InP, an n-InGaAsP interface layer 4, an n-InP multiplication layer 5, and a p-InP layer 8. Light of 1.65μm incident from the p-InP layer 8 side is absorbed and converted to carriers by photoelectric conversion within the light absorption layer 3 of n-InGaAs/InAsP super lattice, and the resulting carriers flow to an external circuit. The super lattice of InGaAs and InAsP to be lattice-matched with InP restrains generation of dark current due to lattice non-matching to a low level.
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