METHOD OF FORMATION OF SEMICONDUCTOR WITH STORAGE ELECTRODE

摘要

forming a word line comprising a polysilicone(2) and an oxide spacer(1) on a silicone substrate(100), and forming a first contact hole(10) by etching a first oxide film(3) by Direct Contact method after depositing the first oxide film(3) and forming a photoresist pattern(5); flattening the surface by depositing a second oxide film(7) on a nitrided film(6); forming a second contact hole(11) in the first contact hole(10) by etching the second oxide film(7) and the nitrided film(6) by Self-Aligned Contact method; dry etching of a storage electrode polysilicone(8) by using a photoresist pattern(9) as a mask; and forming a storage electrode(8A) by removing the second oxide film(7) by wet etching after removing the photoresist pattern(9).