| 摘要 |
PURPOSE: To provide a method of manufacturing a semiconductor device, which can achieve a flattening of the surface of an SiN film even if the condition of an etchback is fluctuated. CONSTITUTION: A P-type TEOS film 24 6000Åthick is formed on a semiconductor substrate 20 formed with wiring patterns 22 by a plasma CVD method using Si (OC2 H5 )4 gas and an SiN film 26 1000Åthick is formed on this film 24 by the plasma CVD method in a state that it extends along the recesses and projections of the film 24. For flattening the surface of the film 26, a glass solution dissolved in an organic solvent is spin-coated on the film 26 6000Åthick or thereabouts, the glass solution is subjected to heat treatment (400 deg.C, 30 minutes) to form an Si oxide film (an SOG film) 28 and after that, the films 26 and 28 are etched back.
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