发明名称 ELECTRIC FIELD EFFECT ELECTRON EMISSION ELEMENT AND ITS PREPARATION
摘要 <p>PROBLEM TO BE SOLVED: To provide a field-effect electron emitting element having a diamond thin film chip that utilizes a diamond thin film having a low work function due to negative electron affinity and allowing its yield to be improved even in manufacturing large size elements. SOLUTION: This field-effect electron emitting element includes a back substrate 11, a striped negative electrode 12 of a predetermined thickness formed on the said back substrate, a micro-chip supporting member 12' of a specicied material having a predetermined height that is formed on the said negative electrode, a micro chip 12" of a material having a work function not more than a specified value that is formed into a flat plate of a predetermined thickness, and a hole surrounding the micro-chip supporting member 12. The element is also provided with an insulation layer 13 that is formed to situate at a position lower than the micro chip 12" by a predetermined height, an opening that is formed on the insulation layer 13 a specified distance away from the micro- chip supporting member 12', and a gate 14 that is formed to situate at a position lower than the micro chip 12" by another predetermined height.</p>
申请公布号 JPH08273526(A) 申请公布日期 1996.10.18
申请号 JP19950184368 申请日期 1995.07.20
申请人 SANSEI DENKAN KK 发明人 KIN SHIYOUMIN
分类号 H01J1/30;H01J1/304;H01J9/02;(IPC1-7):H01J1/30 主分类号 H01J1/30
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