| 摘要 |
PURPOSE: To form a light emitting device having a plurality of wavelengths on a signal substrate. CONSTITUTION: A plurality of diode portions 119, 120 are formed on a single substrate 101. The diode portions include an n-type conductive layer made of a GaN layer 103 and an AlGaN layer 104 which are doped with Si, an active layer made of an InGaN layer 105 doped with Zn, and a p-type conductive layer made of an AlGaN layer 106 and a GaN layer 107 which are doped with Mg. The high-resistance GaN layer 107 is used for isolation of the diode portions 109 and 120. Low-resistance p-type conductive layers 113 and 114 of the diode portions 119, 120 are formed by annealing the Mg-doped AlGaN layer 106 as a high-resistance layer in nitrogen atmosphere and thus lowering the resistance of the entire region thereof, or alternatively by irradiating the AlGaN layer 106 together with a part of the high-resistance GaN layer 107 with an electron beam and thus lowering the resistance of a part thereof. By having three types of light emitting diode portions for red, blue and green, a light emitting device which provides full colors may be realized. Combination with a red GaP compound semiconductor diode may also be realized. |
