| 摘要 |
PURPOSE: To provide a nitride compound semiconductor laser which is excellent in mass-productivity and whereto a current constriction and a waveguide path structure can be fixed readily. CONSTITUTION: After a region wherein an AlN buffer layer 3 or a GaN buffer layer is formed and a region wherein they are not formed are formed on a sapphire substrate 1, crystal growth of a laser structure constituted of nitride compound semiconductor layers 4 to 8 is carried out. Thereby, light confinement and carrier confinement by formation of a self-waveguide path structure can be executed by performing crystal growth for a laser structure constituted of the nitride compound semiconductor layers 4 to 8 on the sapphire substrate 1 wherein a buffer layer is formed along the optical axis alone. As a result, a laser beam whose transverse mode is controlled by low injection carrier density can be obtained. |
