PZT THIN FILM FOR FERROELECTRIC SUBSTANCE CAPACITOR AND ITS PREPARATION

摘要

PURPOSE: To improve the fatigue phenomena of a PZT thin film and improve its durability by doping its PZT ferroelectric with a donor element and an acceptor element simultaneously. CONSTITUTION: A PZT (PbZr1-x Tix O3 ) ferroelectric is doped with a donor element and an acceptor element simultaneously to suppress influences resulting from charge disproportion and to improve the fatigue characteristic and leakage current characteristic of a PZT thin film simultaneously. The donor element is typically Nb (+5) or Ta (+5), and the acceptor element is typically Sc (+3), Mg (+2) or Zn (+2). That doping of an appropriate combination of elements has an advantageous effect of improving the structure of PZT and avoids depletion caused by charge disproportion between the donor and the acceptor. The doped PZT thin film thus manufactured in such procedures has limited small leakage currents and improved durability.