| 摘要 |
PURPOSE: To perform dry etching with plasma gas of containing chlorine and/or fluorine, so as to effectively etch a gallium nitride compound semiconductor containing at least gallium and nitrogen and improve ohmic property. CONSTITUTION: A compound semiconductor 3 containing at least gallium and nitrogen is dry-etched with plasma gas of containing chlorine and/or fluorine. Then, the dry-etched surface of the compound semiconductor 3 is dry-etched with plasma gas of inert gas. Subsequently, metal is evaporated on an electrode forming portion 5. The compound semiconductor 3 containing at least gallium and nitrogen is GaN, GaAlN, GaInN, AlGaInN, and the like. The gas containing chlorine and/or fluorine is chlorine based or fluorine based gas, such as, dichlorodifluoromethane or tetrachloromethane. |
