| 摘要 |
PURPOSE: To avoid the inclusion of metal oxide in an insulation film on the source/drain by recovering the breakdown voltage of a damaged gate insulation film of a MOS transistor containing high-melting point metal silicide in a gate electrode. CONSTITUTION: After the formation of a gate electrode 6A, a scheduled region for source/drain formation is thermally oxidized in a covered state by a gate insulation film 3, ion implantation of impurities is performed, an insulating spacer 10 is formed at the gate electrode side face, and then an insulating film 11 is deposited on an exposed source/drain region by a chemical vapor growth method. |
