| 摘要 |
PROBLEM TO BE SOLVED: To reduce the number of transistors and bit lines per memory cell by forming constitution in which a static random access memory(SRAM) including five MOS transistors needs only two cells and three bit lines. SOLUTION: A first bit line 235 is connected on the opposite side to an SRAM cell 200 through a path transistor 225. A second bit line 265 is connected on the opposite side to an SRAM cell 210 through a path transistor 260. A third bit line 270 connects a power supply to the source terminals of p-channel transistors 205, 215, 240, 250. The gates of the path transistors 225, 260 are connected to a word line 230, and reading can be performed by the common basic line technique of a control circuit 275. |
