| 摘要 |
PURPOSE: To realize a single electronic device which is enough in controllability and formed around a room temperature by a method wherein a fine region is formed on the top of a pyramid-like semiconductor facet, and a barrier layer is formed adjacent to the fine region. CONSTITUTION: An N<+> GaAs layer 12 is grown on a GaAs substrate 11 to serve as a drain contact layer, an SiO2 layer 10 is deposited thereon, a triangular window whose side is 50nm or so in length is provided in the SiO2 layer 10 by an electron beam exposure and wet etching, and an N<+> GaAs layer 13 is selectively grown at a growth temperature of 500 deg.C through a vapor growth method using the SiO2 layer 10 as a mask to from a pyramid-shaped facet. A fine region is formed on the top of the pyramid-shaped facet, and an AlGaAs layer 15 serving as a barrier layer and an N<+> GaAs layer 16 serving as a quantum dot are formed adjacent to the fine region. By this setup, a single electronic element high enough in controllability can be realized around a room temperature. |
