| 摘要 |
PURPOSE: To effectively dissipate the heat generated from the inside of a semiconductor device, and exhibit sufficient cooling effect with low consumption power, by making the consumption power flow in a Peltier cooling element. CONSTITUTION: Each of the pads 202 for circuit input/output is wired in a circuit. Metal of metal pads 203 for cooling is formed in metal of the upper layer than the wiring metal by using a Peltier cooling element, and cooled from the circuit upper part. The Peltier cooling element is formed on a P-type substrate together with an integrated circuit. Metal wiring 205 is connected with an earth potential pattern in the circuit. Metal wiring 208 is connected with the earth potential pattern. For example, the Peltier cooling element is connected in series between power supply voltage wiring and earth voltage wiring, and a consumption current itself is made to flow in the Peltier cooling element. Thereby a power supply for the Peltier element is made unnecessary, and generated heat proportional to a consumption current can be effectively dissipated. |
