| 发明名称 |
Halbleitereinrichtung und Herstellungsverfahren dafür |
| 摘要 |
<p>A semiconductor device is made by etching a III-V compound semiconductor layer having a (100) surface using a mask having an opening defined by edges including at least one edge along an [0 &upbar& 11] direction of the layer so that the surface revealed by etching has a (111) orientation. An electrode is formed on the (111) surface by vacuum vapor deposition.</p> |
| 申请公布号 |
DE4137058(C2) |
申请公布日期 |
1996.10.17 |
| 申请号 |
DE19914137058 |
申请日期 |
1991.11.11 |
| 申请人 |
MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP |
发明人 |
HIRONAKA, MISAO, ITAMI, JP |
| 分类号 |
H01L21/60;H01L21/28;H01L23/482;H01L29/04;(IPC1-7):H01L23/482;H01L21/302;H01L23/528 |
主分类号 |
H01L21/60 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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