| 摘要 |
<p>A method for fabricating a micromechanical device (48) and a semiconductor circuit (70) on a substrate (10) includes the steps of forming the micromechanical device (48) on a device area (58) of the substrate (10), the micromechanical device (48) being embedded in a sacrificial material (22, 34, 42), selectively depositing a planarization layer (54) on the substrate (10) in a circuit area (56) thereof, forming the semiconductor circuit (70) on the planarization layer (54) in the circuit area (56) and removing the sacrificial material (22, 34, 42) from the embedded micromechanical device (48). In a preferred embodiment, the planarization layer is an epitaxial silicon layer (54). A protective cap (98) may be formed over the micromechanical device (48), so that it is completely encapsulated and is thereby protected against particulate contamination.</p> |
