| 摘要 |
PURPOSE:To enable a semiconductor device to have a high open-circuit voltage under illumination, particularly under illumination of a low illuminance, by providing at least one of P-type and N-type layers with a region in which the amount of a dopant is progressively increased from one interface to the junction interface with the P-type or N-type electrode. CONSTITUTION:A glass substrate 1 having a transparent electrode 2 is provided with a P-type semiconductor layer 3 such that it has a minimum amount of a dopant on the P-N junction interface. An I-type semiconductor layer 4 and subsequently an N-type semiconductor layer 5 are provided on the P-type layer 3. Further, a rear-face electrode 6 is provided thereon. Alternatively, the P-type semiconductor layer 3 may contain the dopant uniformly in its entire body while the N-type semiconductor layer may have a minimum amount of dopant on the N-I junction interface. Though incident light is applied from the side near the P-type layer according to this embodiment, it may be applied from the side near the N-type layer. Further, though one set of PIN layers is provided in this embodiment, two to five sets of PIN layers may be provided by superposing them. In this case, the sets from the second on may be constructed such that the junction interface with the I-type layer has a minimum amount of dopant or they may be constructed in an ordinary manner. |
