| 摘要 |
<p>PURPOSE:To prevent occurrence of after corrosion, by temporarily storing materials to be treated between atmosphere and a treating chamber in a vacuum state, generating oxygen radical and ozone with active species producing means, which is arranged in a vacuum storing chamber, and performing etching. CONSTITUTION:Wafers 15 are stored in a storing cassette 5 in a vacuum chamber 4 through a transfer mechanism 2 and an airtight valve 3 from a wafer cassette 1. An active species producing means 30, which is provided in the vacuum chamber 4, is composed of a gas introducing port 20, a plasma chamber 17 and a high frequency applying coil 18. Electric discharge is generated in gas inside the plasma chamber 17 by electric power, which is applied from a high frequency power source 31, and plasma is formed. Active species are conveyed on a gas stream from the introducing port 20 to an evacuation port 19. The active seeds react with a material to be treated on the wafers in the middle of the path, and etching is performed. Then the inside of the vacuum chamber 4 is evacuated. The wafers are conveyed with a vacuum conveying mechanism 16 and mounted on a parallel planer electrode 12 in a plasma treating chamber 9.</p> |
