| 摘要 |
PURPOSE:To obtain a superconducting thin film of a compound oxide having high critical current density, by preparing a superconducting thin film of a compound oxide containing a specific compound oxide as a main component by using a physical vapor deposition process at a specific film-forming speed. CONSTITUTION:A superconducting thin film of a compound oxide composed mainly of a compound oxide expressed by formula is produced by a physical vapor deposition process at a film-forming rate of 0.01-5Angstrom /sec. In the formula, Ln in one or more lanthanoid elements selected from La, Nd, Sm, Eu, Gd, Dy, Ho, Y, Er and Yb and x is 0<=x<1. In the case of performing the physical vapor deposition by sputtering, it is preferably performed under a pressure of 0.01-0.3Torr in an atmosphere containing 5-95mol% of O2. The other sputtering gas able to be used in combination with O2 is preferably argon which is an inert gas. |
