| 摘要 |
A layer of contact metallization is applied over the surface of a semiconductor slice having a P-N junction. A heat sink layer of high conductivity metal, such as copper, is applied over the contact metallization with a sufficient thickness to provide a predetermined heat dissipation for the P-N junction. A plurality of spaced apart discrete metal contacts are formed over the opposite surface of the semiconductor slice. Portions of the semiconductor slice are then removed between the metal contacts in order to form an array of discrete semiconductor devices, such as avalanche diodes, extending from the heat sink layer. The heat sink layer is then divided to provide a plurality of semiconductor devices attached to individual low thermal impedance heat sink members.
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