DRAM AND MANUFACTURING METHOD THEREOF

摘要

The method of manufacturing DRAM comprises the steps of : isolation by forming a rectangular trench(T) and a field oxide(42); removing the electrode layers(43,45) and a dielectric layer(44) on top and bottom of the trench(T) by etching after forming a capacitor by forming a plate electrode(43), the dielectric layer(44) and a storage electrode(45) on the surface of the trench(T); removing the electrode layers(43,45) and the dielectric layer(44) formed on the edge of the trench(T); forming an insulating film(46) and exposing the top of the storage electrode(45); filling the trench(T) with an epitaxial layer(141), and forming an insulating film(142) and a CVD oxide film; forming a gate oxide(144); photolithography processing after forming a transistor, a second interfacial insulating film(147), a contact part and a plate electrode(148); and photolithography processing after forming a third interfacial insulating film(150), a bit line contact part and a bit line electrode(151).