发明名称 |
Method for manufacturing tunnel junction type josephson device composed of compound oxide superconductor material |
摘要 |
For manufacturing a superconducting device having a tunnel junction formed of an extremely thin insulator layer sandwiched between a pair of oxide superconductor thin films, a first superconducting layer of oxide superconductor thin film is formed on a substrate, and a MgO thin film is deposited on the first superconducting layer at a substrate temperature of not higher than 200 DEG C. The MgO thin film is heat-treated so that crystallinity of the deposited MgO thin film is improved, and thereafter, a second superconducting layer of oxide superconductor thin film is formed on the MgO thin film.
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申请公布号 |
US5565415(A) |
申请公布日期 |
1996.10.15 |
申请号 |
US19950487543 |
申请日期 |
1995.06.07 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
MATSUURA, TAKASHI;TANAKA, SABURO;ITOZAKI, HIDEO |
分类号 |
H01L39/24;(IPC1-7):H01L39/24 |
主分类号 |
H01L39/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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