| 摘要 |
The method of manufacturing EPROM comprises the steps of : depositing oxide layers(13,16) on the entire surface after forming gate oxides(11,14) and a first polysilicone layer(12); etch back of the oxide layers(13,16) to the level of the first polysilicone layer(12); and forming a second polysilicone layer(15) and a gate by conventional method.
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