发明名称 SIMULTANEOUS MIRROR SURFACE ABRASIVE DEVICE OF SEMICONDUCTOR SUBSTRATE
摘要 PURPOSE: To apply a mirror abrasion to all the units of one lot even in case where a wafer number of one lot fed out of the same monocrystal silicone ingot will not turn to a multiple of the sheet number of an abrasive unit. CONSTITUTION: Four units of mirror abrasive units 1A to 1D are installed side by side and each substrate is conveyed to each unit from a loader 30 of a semiconductor substrate, and this substrate is made detachably conveyable in an interval with a work surface plate 10 and thereby a lot of substrates are formed into being made simultaneously polishable. In addition, the number of substrate holding chucks 12 of the work surface plate 10 of one unit of the mirror abrasive unit 1D is made into such a unit as reduced to four pieces from the five pieces, and three units of 5-piece simultaneous abrasion and one unit of 4-piece simultaneous abrasion are combined together, through which all wafers can be polished so accurately under the same condition, no matter what the number of pieces may be.
申请公布号 JPH08267358(A) 申请公布日期 1996.10.15
申请号 JP19950100773 申请日期 1995.03.31
申请人 SUMITOMO SITIX CORP 发明人 FUKUO MASATOSHI;TANAKA HEIGO
分类号 B24B37/04;B24B37/30;H01L21/304 主分类号 B24B37/04
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