发明名称 |
Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode |
摘要 |
The disclosure describes a method of forming a groove in a structure of a semiconductor laser diode, which comprises a crystal growth procedure of epitaxial growth of a core layer comprising MP, wherein M represents one or more of elements belonging to group IIIb of periodic table and an upper layer comprising MAs, wherein M represents one or more of elements belonging to group IIIb of periodic table, successively on (100) surface of MAs crystals in a lower layer comprising MAs; a photolithography and wet etching procedure of, after forming an etching mask on the upper layer, forming an etching window to the etching mask; a first etching procedure of selective etching the upper layer; and a second etching procedure of selective etching other faces except for the face in which (111) face of MP crystals in the core layer is exposed.
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申请公布号 |
US5566198(A) |
申请公布日期 |
1996.10.15 |
申请号 |
US19950380836 |
申请日期 |
1995.01.30 |
申请人 |
MITSUBISHI CHEMICAL CORPORATION |
发明人 |
HORIE, HIDEYOSHI;FUJIMORI, TOSHINARI;NAGAO, SATORU;HOSOI, NOBUYUKI;GOTO, HIDEKI |
分类号 |
H01L33/00;H01S5/20;H01S5/22;H01S5/223;H01S5/227;(IPC1-7):H01S3/18 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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