SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

The semiconductor device with trench-isolation has a trench-isolation film(2A) formed on the boundary of an active region(C) and a field region(D), and a gate oxide(3A) of the field region(D) thicker than a gate oxide(3) of the active region(C). The device enables to prevent deterioration of properties of semiconductor device due to a parasitic capacitor between a gate electrode line and a semiconductor substrate.