发明名称 Dielectric structures having embedded gap filling RIE etch stop polymeric materials of high thermal stability
摘要 Structures containing a dielectric material having a polymeric reactive ion etch barrier embedded therein. The preferred dielectric materials are polymers, preferably polyimide materials. The RIE etch barrier is a copolymer having an aromatic component having high thermal stability and having a cross-linking component selected from metallacyclobutane, metallabutene and vinyl groups. The etch barrier is deposited as a solvent free liquid which can fill gaps between the dielectric material and electrical conductors embedded therein. The liquid polymer is cured to a solid insoluble state. The structures with electrical conductors embedded therein are useful for electronic applications.
申请公布号 US5565529(A) 申请公布日期 1996.10.15
申请号 US19930085465 申请日期 1993.06.30
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 BABICH, EDWARD D.;HATZAKIS, MICHAEL;MCGOUEY, RICHARD P.;NUNES, SHARON L.;PARASZCZAK, JURIJ R.;SHAW, JANE M.
分类号 B32B7/02;C08L83/14;H01B3/18;H01L21/302;H01L21/3065;H01L21/48;H01L23/14;H01L23/498;(IPC1-7):C08L83/00 主分类号 B32B7/02
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