发明名称 |
Dielectric structures having embedded gap filling RIE etch stop polymeric materials of high thermal stability |
摘要 |
Structures containing a dielectric material having a polymeric reactive ion etch barrier embedded therein. The preferred dielectric materials are polymers, preferably polyimide materials. The RIE etch barrier is a copolymer having an aromatic component having high thermal stability and having a cross-linking component selected from metallacyclobutane, metallabutene and vinyl groups. The etch barrier is deposited as a solvent free liquid which can fill gaps between the dielectric material and electrical conductors embedded therein. The liquid polymer is cured to a solid insoluble state. The structures with electrical conductors embedded therein are useful for electronic applications.
|
申请公布号 |
US5565529(A) |
申请公布日期 |
1996.10.15 |
申请号 |
US19930085465 |
申请日期 |
1993.06.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BABICH, EDWARD D.;HATZAKIS, MICHAEL;MCGOUEY, RICHARD P.;NUNES, SHARON L.;PARASZCZAK, JURIJ R.;SHAW, JANE M. |
分类号 |
B32B7/02;C08L83/14;H01B3/18;H01L21/302;H01L21/3065;H01L21/48;H01L23/14;H01L23/498;(IPC1-7):C08L83/00 |
主分类号 |
B32B7/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|