| 摘要 |
<p>PURPOSE: To prevent accuracy of pattern from deteriorating by applying spray- development on front and rear sides of a substrate in order, dip-developing with the use of the developing solution weaker than that used for spray development, and then ashing the residual resist generated by development processes for removing. CONSTITUTION: A to-be-processed substrate is installed to a spinner and then poured with developing wave. The front side is developed with processing time for spray development set to 90% of the time for completing development. Then, the substrate is turned over for development with a rear side 2 with, similarly, processing time set to 90%. Because the processing time for a surrounding part of the to-be-processed substrate is 95% at maximum in this state, dip development is performed with the developing solution for 5% of the development process time. Then the substrate is set to a dry-etching device for, such oriented ashing as suatter etching and RIE, so that resists in not-yet developed parts on front and rear sides of the to-be-processed substrate are removed.</p> |
