| 摘要 |
<p>PURPOSE: To reduce the size of a semiconductor device by incorporating a power supply voltage drop/temperature rise detection circuit for detecting the power supply voltage drop and the temperature rise to deliver a control signal while individually altering the timing for delivering the control signal, and to protect the semiconductor device from much function or breakdown by controlling the internal block individually. CONSTITUTION: The semiconductor device incorporates a power supply voltage drop/temperature rise detection circuit 24 comprising a delay circuit 14 including a plurality of butters 12a-12n connected in series, a phase difference detection circuit 18 including an EXOR gate 16, a pulse width counter 20, and a decision circuit 22. A system clock is fed to a the delay circuit 14 and the phase difference detection circuit 18 while a sampling clock is fed to the pulse width counter 20. The delay circuit 14 is connected with the phase difference detection circuit 18 having an output terminal connected with the pulse width counter 20 and the decision circuit 22. The pulse width counter 20 has an output end connected with the decision circuit 22 and delivers an alarm signal and a stop signal for control.</p> |
