| 发明名称 |
DEPOSITION OF FERROELECRIC THIN FILM |
| 摘要 |
PURPOSE: To obtain a method for depositing a ferroelectric thin film through a simple process by sputtering the thin ferroelectric film in oxygen atmosphere. CONSTITUTION: The method for depositing a ferroelectric thin film comprises a step for laminating a lower electrode 13 on a substrate 10, a step for depositing a ferroelectric thin film 14 in a state connected electrically with the lower electrode 13 by sputtering using a sputtering gas containing oxygen, and a step for laminating an upper electrode connected electrically with the ferroelectric thin film 14. |
| 申请公布号 |
JPH08264526(A) |
申请公布日期 |
1996.10.11 |
| 申请号 |
JP19950060157 |
申请日期 |
1995.03.20 |
| 申请人 |
OLYMPUS OPTICAL CO LTD |
发明人 |
YOSHIMORI HIROYUKI;MIHARA TAKASHI;WATANABE HITOSHI |
| 分类号 |
C01G29/00;C01G35/00;C23C14/08;C23C14/34;H01L21/316;H01L21/8242;H01L21/8246;H01L21/8247;H01L27/105;H01L27/108;H01L29/788;H01L29/792 |
主分类号 |
C01G29/00 |
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