DISTRIBUTED REFLECTION SEMICONDUCTOR LASER DEVICE WITH WAVELENGTH SWEEPING FUNCTION

摘要

PURPOSE: To sweep a wavelength over a wide range by providing a non-active waveguide region of a quantum well layer which has larger lattice constant than that of a substrate and smaller lattice constant of the active region of the quantum well layer applied by a compressive strain than that of the substrate and applied by tensile strain. CONSTITUTION: A GaInAsP barrier layer 17 and a GaInAsP well layer 18 introduced with a compressive strain are sequentially alternately crystalline grown, and a light-carrier isolation confinement GaInAsP layer 34 which has a band gap wavelength of 1.15μm is crystalline grown on the final barrier layer to form a compressive strain multiple quantum well structure having a photoluminescence wavelength of 1.55μm. A GaInAsP layer 9 and a GaInAsP layer 10 in which a lightly different lattice constant from that of the substrate and a tensile strain is applied are sequentially alternately crystalline grown, and the upper part is covered with a light-carrier isolation confinement GaInAsP layer 34 having a band gap wavelength of 1.15μm to form a multiple quantum well structure having a tensile strain of photoluminescence wavelength of 1.3μm. Thus, the wavelength is swept by a wide range.