| 摘要 |
PURPOSE: To provide a vapor growth method of a high-quality single-crystal GaN layer. CONSTITUTION: GaN buffer layer 2 is deposited on a sapphire substrate 1 by metal organic vapor-phase epitaxy(MOVPE) at 600 deg.C by supplying trimethylgallium(TMG) and ammonium with hydrogen as a carrier gas. Then, the supply of TMG is stopped, temperature is increased to 1030 deg.C within the mixed atmosphere of ammonium and hydrogen, and further single-crystal GaN layer 3 is deposited by adding triethylgallium(TEG). Therefore, by switching a feed gas, a flat GaN buffer layer with less residual impurity can be deposited over a wide temperature range, the mixture of such impurity as carbon can be suppressed in the growth of the single-crystal GaN layer, and a GaN single crystal with an improved C-axis orientation property and a high crystallizability can be obtained. |
