| 摘要 |
<p>PURPOSE: To reduce the thickness of driver circuit parts by mechanically adhering only the semiconductor integrated circuits equal to stick crystals onto a substrate and electrically connecting these circuits as well. CONSTITUTION: Metallic wirings 4 and the semiconductor integrated circuits 6 are mechanically fixed onto the substrate 3. Further, these circuits are electrically connected by heating the electric wirings 12 formed of materials, such as transparent conductive films, and metallic wirings 4 arranged on the substrate 3 to melt by irradiating the parts where both overlap on each other with a laser. At this time, the metallic wirings 4 are desired to melt easily. Then, low melting metals, such as aluminum, indium, tin and gold, are preferable. In such a case, the semiconductor integrated circuits 6 are formed to the structure in which N channel type TFTs 7 and P channel type TFTs 8 are held by ground surface insulating films 9, interlayer insulators 10 or passivation films 11 of silicon oxide, etc. The connection of the metallic wirings 4 and the wiring electrodes 12 may be electrically executed by fixing both with anisotropic conductive adhesives and press bonding both under heating.</p> |
