| 摘要 |
<p>PURPOSE: To enable effective hydrogen heat treatment at a temperature which an aluminum wiring and an aluminum electrode of a wiring and an electrode whose main component is aluminum can endure, by maintaining a specimen within a specific temperature range, in the forming process of a semiconductor device. CONSTITUTION: The following are installed: a process chamber 101 constituted of stainless whose surface is covered with nickel metal, piping 102 for introducing hydrogen gas in the process chamber 101 whose inner piping surface is coated with nickel metal, a valve 103 for controlling the amount of hydrogen gas to be introduced from the piping 102, a heater 104 for heating the piping 102, a heater 108 for heating the process chamber 101 itself, a holder 106 on which a substrate 107 is arranged as an object for hydrogen heat treatment, and piping 105 for discharging unnecessary gas. The hydrogen gas introduced in the piping 102 turns to the part of the piping 102 whose part is heated by the heater 104 and active hydrogen. The heating temperature by a heater 104 is preferably set to 150±20 deg.C in this case.</p> |
