| 摘要 |
PURPOSE: To improve the electrical property and optical property of a semiconductor laser by interposing a protective layer having a specific thickness between a first clad layer and second clad layer. CONSTITUTION: A first grown layer is constituted on the surface of a substrate 10 by successively forming a lower clad layer 21, active layer 22, first upper clad layer 23, protective layer 24 which is set to a thickness of 30-40Åand has a conductivity which is opposite to that of the substrate 10, AlGaAs layer 25, and current limiting layer 26 on the surface of the substrate 10. In the first grown layer, a stripe groove 30 which has such a depth that the surface of the protective layer 24 is exposed in the groove 30 and tapered side walls 31 which are formed so that the width of the groove 30 can become narrower toward the substrate 10 is formed along the wavelength of the laser resonator of a semiconductor laser 1. Then a second grown layer is constituted of a second upper clad layer 41 and cap layer 42. The second grown layer is formed on the first grown layer so that the layer can follow the shape of the groove 30.
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