| 摘要 |
<p>PURPOSE: To lower threshold voltage, to allow the number of stages of MONOS type memory transistors to cut down, to reduce a chip area, and to suppress the increasing of manufactured masks and manufacturing process by using a MONOS type memory transistor having the same structure as a memory block. CONSTITUTION: A high voltage generation circuit 11 is constituted of at least one or more memory transistors having the same structure as a metal-oxide silicon film-nitride silicon film-oxide silicon film-semiconductor type memory transistor constituting a memory block and capacitors 21 of the same number as the memory transistors. In the memory transistor, a gate is connected to a source, one side of a terminal of the capacitor 21 is connected to points of contact of each memory transistor, a clock is inputted to the other side of the terminal of the capacitor 21 with alternately opposite phase.</p> |
