发明名称 MANUFACTURE OF COLD ELECTRON EMITTING ELEMENT
摘要 <p>PURPOSE: To provide a cold electron emitting element which has an emitter where the apex angle of the tip is small and the tip is sharp and small. CONSTITUTION: A silicon substrate 11, where a reverse pyramid type recess 15 consisting of four side faces in (111) face azimuth is made in advance, is soaked in hydrofluoric acid solution. Next, the silicon substrate is scratchedly processed in acetone solution containing diamond fine powder, by ultrasonic vibration method, and then the silicon substrate 11 is soaked and anisotropically etched in tetramethyl ammonium hydroxide solution so as to form sharpened reverse pyramid type recesses 21. Diamond being emitter material 16 is made in the sharpened reverse pyramid type recess 21 by chemical vapor growth method, and than the silicon substrate 11 is removed, thus an emitter 17 for a cold electron emitting element, which has a sharp tip 22, is manufactured.</p>
申请公布号 JPH08264111(A) 申请公布日期 1996.10.11
申请号 JP19950065714 申请日期 1995.03.24
申请人 AGENCY OF IND SCIENCE & TECHNOL 发明人 ITO JUNJI;OKANO TAKESHI
分类号 H01J9/02;H01J1/30;H01J1/304;(IPC1-7):H01J9/02 主分类号 H01J9/02
代理机构 代理人
主权项
地址