发明名称 SUPPORT BODY FOR GRINDING WAFER AND CHEMICL-MECHANICAL GRINDING DEVICE AND METHOD
摘要 <p>PROBLEM TO BE SOLVED: To enable a semiconductor wafer to be uniformly polished and enhanced in polish throughput by a method wherein a slurry path is carefully provided to the outer edge of a wafer support, and a flow of slurry applied to an interface between the wafer and a pad is enhanced in flow rate. SOLUTION: A support 16 includes an outer edge 56 which surrounds a wafer holding plane 52, and the outer edge 56 includes wafer paths 58. The wafer paths 58 are spiraled to send slurry to an interface between a semiconductor wafer and a conditional pad. As the slurry paths 58 are cured, they function as jets to draw in slurry, and slurry is forcibly sent between the semiconductor wafer and the conditional pad. The slurry paths 58 are distributed in the outer edge 56 so as to introduce slurry uniformly to an interface between the wafer and the pad. By this setup, a semiconductor wafer can be uniformly polished and enhanced in polish throughput.</p>
申请公布号 JPH08264627(A) 申请公布日期 1996.10.11
申请号 JP19960052075 申请日期 1996.03.08
申请人 TEXAS INSTR INC <TI> 发明人 YUUJIIN OO HENPERU JIYUNIA
分类号 H01L21/683;B24B53/007;B24B53/017;H01L21/304;(IPC1-7):H01L21/68;B24B37/00 主分类号 H01L21/683
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