LIGHT EMITTING COMPOUND SEMICONDUCTOR ELEMENT AND MANUFACTURE THEREOF

摘要

PURPOSE: To provide a high performance light emitting compound semiconductor element and a method capable of manufacturing industrially the light emitting element. CONSTITUTION: The light emitting element comprises a GaAs substrate 1, a 10 to 80nm - thick GaN buffer layer 2 formed on the substrate 1, an Alx Ga1-x N (provided that 0<=x<1) epitaxial layer 3 formed on the layer 2, a mismatching surface 8 which is positioned on the interface between the layers 2 and 3, a luminous layer 4 formed on the layer 3 and a clad layer 5 formed on the layer 4. The layer 2 is formed at a first temperature by an organometallic chloride vapor phase epitaxy growth method and the layer 3 is formed at a second temperature higher than the first temperature.